Cu(In,Ga)Se₂(CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray diffraction (XRD) and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two preparation processes, we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low temperature results in the CIGS thin films with the (220)/(204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production.

MgZnO合金具有可覆盖日盲紫外波段的禁带宽度和晶格匹配的单晶衬底, 是理想的日盲紫外探测材料。由于MgO和ZnO分属立方相和六角相, 分相问题使高质量单一相MgZnO难以获得。热处理是提高薄膜结晶质量的有效手段。利用MOCVD方法制备了单一立方相Mg0.57Zn0.43O合金薄膜, 研究了薄膜的退火行为对薄膜结构和光学性能的影响。研究发现, 450 ℃的原生样品经过550,650,750,850 ℃氧气氛退火后, 薄膜的结晶特性和表面形貌得到明显的改善。随着退火温度的增加, 薄膜吸收截止边逐渐蓝移, 带隙展宽。X光电子能谱分析发现, 随着退火温度增加, Zn含量逐渐减小, 这种现象被归结为组分蒸汽压的差异。在退火温度达到950 ℃时, 样品发生了分相, 出现了低Mg含量的六角相MgZnO。

设计制作了一种Au/ZnO/Al结构的紫外探测器, 光的入射方式采用背入射式。ZnO薄膜是用磁控溅射在蓝宝石衬底上制备的。I-V测试表明:Au与ZnO形成了肖特基接触。得到探测器的光响应峰值在352 nm, 截止边为382 nm, 可见抑制比达一个量级。由于该探测器是一种垂直结构器件, 对于进一步实现ZnO紫外探测器阵列及单光子探测有很好的研究价值。